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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9013 series 20 V NPN general purpose transistors Product specification Supersedes data of 2003 May 15 2004 Aug 10 Philips Semiconductors Product specification 20 V NPN general purpose transistors FEATURES * High power dissipation: 710 mW * Low collector capacitance * Low collector-emitter saturation voltage * High current capability. APPLICATIONS * General purpose switching and amplification. DESCRIPTION NPN general purpose transistor in a SOT54 (TO-92) leaded plastic package. PNP complement: PSS9012 series. MARKING TYPE NUMBER PSS9013G PSS9013H MARKING CODE S9013G S9013H Fig.1 QUICK REFERENCE DATA SYMBOL VCEO IC ICM PINNING PIN 1 2 3 collector base emitter PSS9013 series PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. 20 500 1 UNIT V mA A DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM279 Simplified outline (SOT54; TO-92) and symbol. LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 CONDITIONS open emitter open base open collector - - - - - - - -65 - -65 MIN. MAX. 40 20 5 500 1 100 710 +150 150 +150 V V V mA A mA mW C C C UNIT 2004 Aug 10 2 Philips Semiconductors Product specification 20 V NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 PSS9013 series VALUE 175 UNIT K/W 1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE hFE PARAMETER collector-base cut-off current emitter-base cut-off current DC current gain DC current gain PSS9013G PSS9013H VCEsat VBEsat VBEon Cc collector-emitter saturation voltage base-emitter saturation voltage base-emitter turn on voltage collector capacitance IC = 100 mA; IB = 10 mA IC = 500 mA; IB = 50 mA IC = 500 mA; IB = 50 mA VCE = 1 V; IC = 100mA CONDITIONS VCB = 35 V; IE = 0 VCB = 35 V; IE = 0; Tj = 150 C VEB = 5 V; IC = 0 VCE = 1 V; IC = 500 mA VCE = 1 V; IC = 50 mA 112 144 - - - - - - 60 250 1 760 5 166 202 250 600 1.2 1000 - mV mV V mV pF - - - 40 MIN. - - - - TYP. MAX. 100 50 100 - UNIT nA A nA VCB = 6 V; IE = Ie = 0; f = 1 MHz - 2004 Aug 10 3 Philips Semiconductors Product specification 20 V NPN general purpose transistors PSS9013 series 103 handbook, halfpage MLE086 handbook, halfpage 30 MLE087 IC fT (MHz) (mA) 20 102 (1) (2) (3) (4) (5) 10 (6) (7) 10 1 10 102 IC (mA) 103 0 0 Tamb = 25 C. (1) IB = 140 A. (2) IB = 120 A. (3) IB = 100 A. (4) IB = 80 A. (5) IB = 60 A. (6) IB = 40 A. (7) IB = 20 A. 4 8 12 20 16 VCE (V) VCE = 6 V. Fig.2 Transition frequency as a function of collector current; typical values. Fig.3 Collector current as a function of collector-emitter voltage; typical values. handbook, halfpage 300 MLE088 handbook, halfpage 300 MLE089 hFE (1) hFE (1) 200 (2) 200 (2) 100 (3) 100 (3) 0 10-1 1 10 102 IC (mA) 103 0 10-1 1 10 102 IC (mA) 103 VCE = 1 V. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. VCE = 2 V. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.4 DC current gain as a function of collector current; typical values. Fig.5 DC current gain as a function of collector current; typical values. 2004 Aug 10 4 Philips Semiconductors Product specification 20 V NPN general purpose transistors PSS9013 series 103 handbook, halfpage VCEsat (mV) (1) MLE090 103 handbook, halfpage VCEsat (mV) 102 MLE091 102 (2) (3) (1) 10 10 (2) (3) 1 10-1 1 10 102 IC (mA) 103 1 10-1 1 10 102 IC (mA) 103 IC/IB = 10. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. Fig.6 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. 103 handbook, halfpage RCEsat () 102 MLE092 103 handbook, halfpage RCEsat () 102 MLE093 10 10 1 (2) (1) (3) 1 (1) (2) (3) 10-1 10-1 IC/IB = 10. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. 1 10 102 IC (mA) 103 10-1 10-1 IC/IB = 20. (1) Tamb = 100 C. (2) Tamb = 25 C. (3) Tamb = -55 C. 1 10 102 IC (mA) 103 Fig.8 Collector-emitter equivalent on-resistance as a function of collector current; typical values. Fig.9 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2004 Aug 10 5 Philips Semiconductors Product specification 20 V NPN general purpose transistors PSS9013 series handbook, halfpage 1.4 MLE094 handbook, halfpage 1.4 MLE095 VBEsat (V) 1 (1) (2) VBEsat (V) 1 (1) (2) 0.6 (3) 0.6 (3) 0.2 10-1 1 10 102 IC (mA) 103 0.2 10-1 1 10 102 IC (mA) 103 IC/IB = 10. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 100 C. IC/IB = 20. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 100 C. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. handbook, halfpage 1.2 MLE096 handbook, halfpage 1.2 MLE097 VBE (V) (1) VBE (V) (1) 0.8 (2) 0.8 (2) (3) (3) 0.4 0.4 0 10-1 1 10 102 IC (mA) 103 0 10-1 1 10 102 IC (mA) 103 VCE = 1 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 100 C. VCE = 2 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 100 C. Fig.12 Base-emitter voltage as a function of collector current; typical values. Fig.13 Base-emitter voltage as a function of collector current; typical values. 2004 Aug 10 6 Philips Semiconductors Product specification 20 V NPN general purpose transistors PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads PSS9013 series SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.55 c 0.45 0.38 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max. 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 JEITA SC-43A EUROPEAN PROJECTION ISSUE DATE 97-02-28 04-06-28 2004 Aug 10 7 Philips Semiconductors Product specification 20 V NPN general purpose transistors DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION PSS9013 series This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 2004 Aug 10 8 Philips Semiconductors - a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. (c) Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp9 Date of release: 2004 Aug 10 Document order number: 9397 750 13685 |
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